TIP146
- Description
- Transistor Pnp Silicon Darlington Bvceo=80V Ic=10Ato-247 Case With Base-Emitter Shunt Resistors
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Fusion-Tested. Quality Guaranteed.
- High Power Dissipation: 125W
- PNP Polarity for Versatile Applications
- Three-Pin Configuration for Easy Integration
- Base-Emitter Shunt Resistors for Improved Stability
- Non-Compliant with RoHS and Unaffected by REACH SVHC
The NTE Electronics PNP Silicon Darlington Transistor is a robust and efficient electronic component designed for high-power applications. With a maximum collector-emitter voltage (Bvceo) of 80V and a continuous collector current (Ic) rating of 10A, this transistor is ideal for driving loads in various electronic circuits. Housed in a durable TO-247 package, it features base-emitter shunt resistors for enhanced performance and stability, making it a reliable choice for engineers and designers in need of high-performance BJTs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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