PSMN2R3-100SSEJ
- Description
- MOSFET, N-Channel, 100V, 255A, Lfpak88 |Nexperia PSMN2R3-100SSEJ
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 255A
- Drain to Source Resistance
- 1.8mΩ
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- High Efficiency with Low Drain to Source Resistance: 1.8mΩ
- Robust Power Dissipation Capability: 341W
- Fast Switching Performance with Turn-On Delay Time: 41ns
- Wide Operating Temperature Range: -55°C to 175°C
- RoHS Compliant for Environmental Safety
The Nexperia PSMN2R3-100SSEJ is a high-performance N-Channel MOSFET designed for demanding applications requiring high efficiency and reliability. With a maximum drain-source voltage of 100V and a continuous drain current rating of 255A, this MOSFET is ideal for power management and switching applications. Its compact Lfpak88 package ensures optimal thermal performance, making it suitable for a wide range of industrial and consumer electronics.
The Nexperia PSMN2R3-100SSEJ is commonly used in power management applications, especially in high-efficiency switching and motor control systems. With a high continuous drain current rating of 255A and a maximum voltage of 100V, it is ideal for demanding environments. Engineers and designers in automotive and industrial sectors often utilize this MOSFET for its reliability and performance in challenging conditions.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.