PSMN2R3-100SSEJ
- Description
- MOSFET, N-Channel, 100V, 255A, Lfpak88 Rohs Compliant: Yes |Nexperia PSMN2R3-100SSEJ
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 255A
- Drain to Source Resistance
- 1.8mΩ
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
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- Continuous Drain Current of 255A
- Drain to Source Breakdown Voltage of 100V
- Low Drain to Source Resistance of 1.8mO
- High Power Dissipation Capability of 341W
- Fast Switching Times with Turn-On Delay of 41ns
- Lead-Free & RoHS Compliant
The Nexperia PSMN2R3-100SSEJ is a high-performance N-Channel MOSFET designed for demanding applications requiring high efficiency and reliability. With a continuous drain current rating of 255A and a breakdown voltage of 100V, this MOSFET is ideal for power management and switching applications. Its compact LFPak88 package ensures optimal thermal performance, making it suitable for various industrial and consumer electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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