NVH4L022N120M3S
- Description
- Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, TO247-4L
- Datasheet
Quantity
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- Low On-Resistance of 22 mohm
- High Voltage Rating of 1200 V
- TO247-4L Package for Easy Integration
- Enhanced Thermal Performance
- Ideal for Power Converters and Inverters
The onsemi EliteSiC MOSFET is a cutting-edge silicon carbide device designed for high-efficiency power applications. With a low on-resistance of 22 mohm and a voltage rating of 1200 V, this MOSFET delivers exceptional performance in demanding environments. Its TO247-4L package ensures easy integration into various systems, making it an ideal choice for power converters, inverters, and other high-voltage applications. The EliteSiC series is engineered to provide superior thermal performance and reliability, enhancing the overall efficiency of your designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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