SIR500DP-T1-RE3
- Description
- N-Channel 30 V (D-S) 150 °C MOSFET
- Datasheet
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- Maximum Drain-Source Voltage: 30 V
- High Junction Temperature Rating: 150 °C
- N-Channel Configuration for Enhanced Conductivity
- RoHS Compliant for Environmental Safety
The Vishay N-Channel 30 V 150 °C MOSFET is designed for high-efficiency switching applications, providing exceptional performance in a compact package. This MOSFET is ideal for power management solutions, offering reliable operation in demanding environments. With a maximum junction temperature of 150 °C, it ensures durability and longevity in various electronic circuits. Its N-Channel configuration allows for enhanced conductivity and lower on-resistance, making it a preferred choice for engineers seeking optimal performance in their designs.
The N-Channel 30 V (D-S) 150 °C MOSFET is commonly used in power management applications, including switching and amplification. Its high temperature rating and efficient performance make it ideal for consumer electronics and industrial automation. Engineers and designers utilize this MOSFET to optimize circuit efficiency and thermal management.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.