IXBH12N300

Description
Trans IGBT Chip N-CH 3000V 30A 160000mW 3-Pin(3+Tab) TO-247AD
Collector Emitter Voltage (VCEO)
3.2V
Max Power Dissipation
160W
Datasheet
Product Image
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  • Collector Emitter Breakdown Voltage: 3kV
  • Max Collector Current: 30A
  • Max Power Dissipation: 160W
  • Reverse Recovery Time: 1.4µs
  • 3-Pin TO-247 Package

The IXYS Trans IGBT Chip N-CH is a powerful electronic component designed for high voltage applications. With a collector emitter breakdown voltage of 3kV and a maximum collector current of 30A, this IGBT chip is ideal for demanding power management tasks. Housed in a robust TO-247 package, it ensures reliable performance in various industrial settings. This component is RoHS compliant, making it suitable for environmentally conscious designs.

The Trans IGBT Chip is commonly used in high-voltage and high-current applications such as inverters, motor drives, and power electronics. Its key capabilities include high breakdown voltage and efficient power handling, making it ideal for industrial and renewable energy systems. Engineers and designers in power electronics utilize this component for its reliable performance in demanding environments.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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