SCT070HU120G3AG
- Description
- Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ.
Quantity
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- High Voltage Rating: 1200 V
- Low On-resistance: 63 mOhm typ
- Automotive-grade Reliability
- Enhanced Thermal Performance
- Lead-Free & RoHS Compliant
The STMicroelectronics Automotive-grade Silicon Carbide Power MOSFET is designed for high-efficiency power management in automotive applications. With a voltage rating of 1200 V and a low on-resistance of 63 mOhm typ, this MOSFET ensures optimal performance and reliability in demanding environments. Its silicon carbide technology provides superior thermal performance and switching capabilities, making it an ideal choice for electric vehicles and other high-power applications.
This automotive-grade silicon carbide Power MOSFET is used for high-efficiency power conversion in electric vehicles and charging infrastructure. With a high voltage rating of 1200 V and low on-resistance of 63 mOhm, it enables faster switching and improved thermal performance. Engineers and designers in the automotive industry utilize this component for its reliability and ability to enhance overall system performance.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.