SISH625DN-T1-GE3
- Description
- Transistor MOSFET P-CH 30V 35A 8-Pin PowerPAK 1212
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- -30V
- Continuous Drain Current (ID)
- -17.3A
- Drain to Source Resistance
- 5.6mΩ
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Continuous Drain Current: -17.3A
- Drain to Source Breakdown Voltage: -30V
- Low Drain to Source Resistance: 5.6mO
- High Power Dissipation: 3.7W
- Fast Switching Times: Turn-On Delay Time of 15ns and Turn-Off Delay Time of 55ns
- Wide Operating Temperature Range: -55°C to 150°C
- RoHS Compliant
The Vishay Transistor MOSFET P-CH 30V 35A is a high-performance power MOSFET designed for efficient switching applications. With a continuous drain current of -17.3A and a low drain-to-source resistance of just 5.6mO, this component ensures minimal power loss and enhanced thermal performance. Housed in an 8-pin PowerPAK 1212 package, it operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for demanding applications in various industries.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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