SA3T21H360W23SR6
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- Frequency Range 2110-2200 MHz
- Average Output Power 56 W
- Voltage Rating 28 V
- High Efficiency for RF Amplification
- Robust Thermal Management Design
The NXP Semiconductors Airfast RF Power LDMOS Transistor is designed for high-efficiency RF amplification in the frequency range of 2110-2200 MHz. With an average output power of 56 W and a voltage rating of 28 V, this transistor is ideal for various communication applications, providing reliable performance and superior linearity. Its robust design ensures optimal thermal management and durability, making it a preferred choice for modern RF systems.
The Airfast RF Power LDMOS Transistor is used in RF amplification applications, particularly in broadband and wireless communication systems. With its high output power and frequency range, it is ideal for base stations, transmitters, and other RF systems, making it popular among telecommunications engineers and manufacturers.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.