PSMN4R8-100YSEX

• 100V Drain-Source Voltage and 100V Drain-Source Breakdown Voltage
• 120A Continuous Drain Current (ID)
• 3.6 Milliohm Drain-Source on-Resistance
• 20V Gate-Source Voltage rating, 294W Power Dissipation
• 22ns Turn-on delay, 36ns Turn-Off Delay
• -55C to 175C Operating range, 1.25mm Package Height

The PSMN4R8-100YSEX from Nexperia is a single-channel N-channel power MOSFET rated at 100V drain-source and 120A continuous drain current, with a 3.6 milliohm drain-source on-resistance recorded in its attributes. Switching attributes give a 22ns turn-on delay and a 36ns turn-off delay, and the device carries a 294W power dissipation rating with a 175C maximum junction temperature. The PSMN4R8-100YSEX is RoHS compliant, 1.25mm tall, and ships on tape and reel in quantities of 1, 500.

A 100V, 120A N-channel MOSFET with single-digit milliohm on-resistance is used in 48V telecom and server power architectures, synchronous rectifiers, motor drive inverters, battery disconnect and hot-swap switches, and high-current DC-DC conversion. The low profile of 1.25mm and tape-and-reel supply suit automated assembly on dense power boards. The product name and the part number encode a 4.8 milliohm on-resistance while the recorded attribute is 3.6 milliohms, which is the typical-versus-maximum distinction; the attribute value is published here and the maximum figure should be confirmed against the Nexperia datasheet.