PSMN4R8-100YSEX
- Description
- Power MOSFET, N-Channel, 100 V, 120 A, 4.8 Milliohms, LFPAK56E, 4 Pins, Surface Mount
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 100V
- Continuous Drain Current (ID)
- 120A
- Drain to Source Resistance
- 3.6mΩ
- Max Junction Temperature (Tj)
- 175°C
- Datasheet
Quantity
30,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Low On-Resistance: 4.8 mΩ
- High Continuous Drain Current: 120 A
- Wide Operating Temperature Range: -55°C to 175°C
- Fast Switching Times: 22 ns Turn-On Delay and 36 ns Turn-Off Delay
- RoHS Compliant
The Nexperia Power MOSFET N-Channel 100 V 120 A LFPAK56E is designed for high-efficiency power management in demanding applications. With a low on-resistance of 4.8 milliohms and a robust power dissipation capability of 294 W, this MOSFET ensures optimal performance in various electronic circuits. Its compact surface mount design and high thermal stability make it suitable for a wide range of environments, operating reliably from -55°C to 175°C.
The Power MOSFET is designed for efficient power management in various applications, including automotive, industrial, and consumer electronics. With a high continuous drain current of 120 A and a low on-resistance of 4.8 milliohms, it is ideal for use in high-performance switching and amplification circuits. Engineers and designers leverage this component for its durability and thermal efficiency, ensuring reliable operation in demanding environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
30,000 AvailableLet us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.