BUK9M6R0-40HX

Description
N-Channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33
Drain to Source Resistance
4.9mΩ
Datasheet
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  • Low Drain to Source Resistance (4.9 mΩ)
  • High Voltage Rating (40 V)
  • Logic Level Gate Drive for Easy Integration
  • RoHS Compliant for Environmental Safety
  • Lifecycle Status: Production

The Nexperia N-channel 40 V, 6.0 mΩ logic level MOSFET in LFPAK33 is designed for high-efficiency switching applications, offering exceptional performance with a low drain-to-source resistance of just 4.9 mΩ. This MOSFET is ideal for use in power management systems, automotive applications, and other demanding environments where reliability and efficiency are paramount. With its compact LFPAK33 package, it ensures optimal thermal performance and space-saving integration in various electronic designs.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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