IXGA48N60A3
- Description
- IXGA48N60A3 Series 600 V 120 A Surface Mount GenX3TM IGBT - TO-263AA
- Max Power Dissipation
- 300W
- Collector Emitter Voltage (VCEO)
- 1.35V
- Datasheet
Quantity
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- High Collector Emitter Breakdown Voltage: 600V
- Low Collector Emitter Voltage (VCEO): 1.35V
- Maximum Collector Current: 120A
- Max Power Dissipation: 300W
- Surface Mount TO-263 Package for Easy Integration
- Lead-Free and RoHS Compliant
- Lightweight Design: 1.59999g
- 3-Pin Configuration for Versatile Applications
The IXYS IXGA48N60A3 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power applications. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 120A, this surface mount device is ideal for demanding applications requiring robust performance and reliability. Housed in a compact TO-263 package, it offers excellent thermal management and is compliant with RoHS standards, making it a perfect choice for environmentally conscious designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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