IRF6618PBF
Description
Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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- High Drain Current Rating: 30A
- Voltage Rating: 30V
- Low On-Resistance: 0.0022 ohms
- N-Channel Configuration for Enhanced Performance
- Silicon Metal-Oxide Semiconductor Technology
The International Rectifier Power Field-Effect Transistor (FET) is a high-performance N-Channel silicon MOSFET designed to deliver exceptional efficiency and reliability in power management applications. With a maximum drain current of 30A and a voltage rating of 30V, this 1-element transistor features a low on-resistance of just 0.0022 ohms, making it ideal for high-efficiency switching applications. Its robust construction ensures optimal thermal performance and durability, catering to the demanding needs of modern electronic designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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