Discrete Semiconductors

Transistors

MOSFETs

Semiconductors

Infineon

RoHS

MOSFET SIC N-CH 650V 63A TO-263 ROHS COMPLIANT: YES |INFINEON IMBG65R030M1HXTMA1|Silicon Carbide MOSFET, Single, N Channel, 63 A, 650 V, 0.03 ohm, TO-263|SIC MOSFET, N-CH, 650V, 63A, TO-263-7; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:63A; Drain Source V

Mosfet Sic N-ch 650V 63A TO-263 Rohs Compliant: Yes |infineon IMBG65R030M1HXTMA1

The Infineon IMBG65R030M1HXTMA1 is a state-of-the-art N-channel MOSFET designed for high-efficiency power management applications. With a voltage rating of 650V and a current capacity of 63A, this component is ideal for demanding applications in industrial and automotive sectors. Its TO-263 package ensures excellent thermal performance and reliability, making it a preferred choice for engineers seeking robust solutions. Additionally, this MOSFET is RoHS compliant, aligning with environmental standards for safer electronic manufacturing.