IXXH75N60B3D1
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- Collector Emitter Breakdown Voltage: 600V
- Max Collector Current: 160A
- Max Power Dissipation: 750W
- Low Collector Emitter Voltage (VCEO): 1.85V
- Fast Reverse Recovery Time: 25ns
- RoHS Compliant
- TO-247 Package for Easy Mounting
The IXYS XPT 600V IGBT GenX3 is a cutting-edge power transistor designed for high-efficiency applications requiring robust performance and reliability. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 160A, this transistor is ideal for demanding power conversion and motor control applications. Packaged in a TO-247 case, it features a through-hole mount for easy integration into various electronic systems. The XPT IGBT GenX3 also boasts a low collector-emitter voltage of just 1.85V and a rapid reverse recovery time of 25ns, making it a top choice for engineers seeking high-performance solutions in power electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.