SKM100GB063D
Description
Igbt, D-61, Igbt, 600 V, 130 A, 600 V, 130 A, 600 V, -40 to 150 Degc | Semikron SKM100GB063D
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
600V
Datasheet

Quantity
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- Collector Emitter Breakdown Voltage: 600V
- Collector Emitter Saturation Voltage: 2.1V
- High Current Rating: 130A
- Wide Operating Temperature Range (-40°C to 150°C)
- Fast Fall Time: 35ns
- Compact Module Design with 7 Pins
- RoHS Compliant and REACH SVHC Free
The Semikron SKM100GB063D is a robust Insulated Gate Bipolar Transistor (IGBT) module designed for high-performance applications requiring efficient power management. With a collector-emitter breakdown voltage of 600V and a current rating of 130A, this module is ideal for industrial and automotive applications. It operates effectively in a wide temperature range from -40°C to 150°C, making it suitable for demanding environments. The compact module design facilitates easy mounting and integration into various systems, ensuring reliable performance and longevity.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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