M425R1GB4PB0-CWM
- Description
- 8GB DDR5 5600 SODIMM 1Rx16 1.1V
- Module Type
- SODIMM
- Data Rate
- 5600MT/s
- Memory Technology
- DDR5
- Memory Type
- SDRAM
Quantity
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- 8GB DDR5 Memory
- 5600MT/S Data Rate
- Single-Rank 1Rx16 Organization
- 262-Pin SODIMM Form Factor
- 1.1V Operating Voltage
- Samsung P-Die
The Samsung M425R1GB4PB0-CWM is an 8GB DDR5 SODIMM rated at 5600MT/s, built as a single-rank 1Rx16 module at 1.1V using Samsung P-die. As part-number M425R1GB4PB0-CWM, it uses a 262-pin SODIMM form factor. Samsung offers it for next-generation notebook and small-form-factor memory.
The M425R1GB4PB0-CWM is used to build or upgrade memory in DDR5-based laptops, mini-PCs, and embedded systems using 262-pin SODIMMs. Its 5600MT/s DDR5 speed and 1.1V operation deliver higher bandwidth and efficiency than DDR4. Integrators deploy it in modern notebook and edge-compute platforms.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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