UF1JLW
Description
Ultra Fast Recovery Rectifier Diode (trr 25ns), 1uA, 600V
Forward Voltage
1.5V
Reverse Recovery Time
25ns
Max Junction Temperature (Tj)
150°C
Max Repetitive Reverse Voltage (Vrrm)
600V
Quantity
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- Ultra Fast Recovery Time: 25ns
- Max Repetitive Reverse Voltage: 600V
- Low Reverse Leakage Current: 1µA
- High Forward Surge Current Capability: 30A
- Max Junction Temperature: 150°C
- Power Dissipation: 400mW
- Lifecycle Status: Production (Active)
The Taiwan Semiconductor Ultra Fast Recovery Rectifier Diode is designed for high-efficiency applications requiring rapid switching and minimal reverse leakage. With a reverse recovery time of just 25ns and a maximum repetitive reverse voltage of 600V, this diode is ideal for power supply circuits, motor drives, and other demanding electronic applications. Its robust construction ensures reliable performance even at elevated temperatures, making it a preferred choice for engineers seeking durability and efficiency in their designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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