CM200DU-12F
Description
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
Datasheet
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- High Collector Current Rating: 200A I(C)
- Breakdown Voltage: 600V V(BR)CES
- N-Channel Configuration for Enhanced Performance
- Ideal for Industrial Motor Drives and Power Inverters
The Mitsubishi Insulated Gate Bipolar Transistor (IGBT) is a powerful and efficient electronic component designed for high-performance applications requiring robust switching capabilities. With a collector current rating of 200A and a breakdown voltage of 600V, this N-Channel IGBT is ideal for use in industrial motor drives, power inverters, and other demanding power electronics applications. Its superior thermal performance and reliability make it a preferred choice for engineers seeking to optimize their designs for efficiency and longevity.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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