GS81302DT20E-500

Description
Qdr SRAM, 8MX18, 0.45NS, CMOS, PBGA165, 15 X 17 Mm, 1 Mm Pitch, FPBGA-165
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  • High-Speed Access Time of 0.45ns
  • 144Mb Density for Enhanced Data Storage
  • Dual-Port Architecture for Concurrent Access
  • Operating Supply Voltage of 1.8V
  • Compact PBGA165 Package (15 x 17 mm, 1 mm Pitch)
  • Wide Operating Temperature Range (0°C to 85°C)
  • RoHS Compliant for Environmental Safety

The GSI Technology Qdr SRAM is a high-speed, dual-port static random-access memory solution designed for demanding applications requiring rapid data access and reliability. With a density of 144Mb and an impressive access time of just 0.45ns, this SRAM is ideal for use in high-performance computing and networking systems. Packaged in a compact PBGA165 format, it operates efficiently at a supply voltage of 1.8V and is capable of functioning in temperatures ranging from 0°C to 85°C, making it suitable for a variety of environments.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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