SIRA99DP-T1-GE3
- Description
- Transistor MOSFET P-Channel 30V 195A 8-Pin SOIC
- Gate to Source Voltage (Vgs)
- -20V
- Drain to Source Voltage (Vdss)
- -30V
- Continuous Drain Current (ID)
- -47.9A
- Drain to Source Resistance
- 1.3mΩ
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Continuous Drain Current: -47.9A
- Drain to Source Breakdown Voltage: -30V
- Drain to Source Resistance: 1.3mO
- Max Operating Temperature: 150°C
- Turn-On Delay Time: 23ns
- Lead-Free & RoHS Compliant
The Vishay Transistor MOSFET P-Channel is a powerful electronic component designed for high-efficiency switching applications. With a continuous drain current of -47.9A and a breakdown voltage of -30V, this MOSFET is ideal for demanding power management tasks. Its compact 8-pin SOIC package ensures easy integration into various electronic circuits while maintaining excellent thermal performance. This component is suitable for a wide range of applications, including automotive, industrial, and consumer electronics.
The Transistor MOSFET P-Channel is widely used in power management circuits, motor control, and switching applications due to its high current handling capability and low on-resistance. It is ideal for designers and engineers working on energy-efficient electronic systems that require reliable performance under varying temperatures. With a maximum drain current of 195A and a breakdown voltage of 30V, this component is suitable for demanding electronics projects.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.