SI3407-TP

Description
30V 4.1A Rds 0.06 P-channel Mosfet, SOT-23 Package
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  • Maximum Drain-Source Voltage: 30V
  • Continuous Drain Current: 4.1A
  • Low On-Resistance: 0.06 ohms
  • Compact SOT-23 Package for Space Efficiency
  • Ideal for Power Management and Signal Processing Applications

The MCC 30V 4.1A P-channel MOSFET is a high-efficiency electronic component designed for a variety of applications requiring reliable switching and amplification. With a maximum drain-source voltage of 30V and a low on-resistance of 0.06 ohms, this MOSFET ensures optimal performance in power management and signal processing tasks. Housed in a compact SOT-23 package, it is ideal for space-constrained designs while delivering robust performance across diverse operating conditions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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