Description
1700V 1000mΩ TO-263-7 G2R™ SiC MOSFET
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  • High Voltage Rating: 1700V
  • Low On-Resistance: 1000mO
  • Wide Operating Temperature Range (-55°C to 175°C)
  • Surface Mount TO-263 Package
  • Production Lifecycle Status
  • REACH SVHC Compliant and RoHS Compliant

The GeneSIC Semiconductor 1700V 1000mO TO-263-7 G2R™ SiC MOSFET is a cutting-edge power semiconductor designed for high-voltage applications. With a maximum operating voltage of 1700V and a low on-resistance of 1000mO, this MOSFET delivers exceptional efficiency and thermal performance. Its robust construction allows for operation in extreme temperature conditions, ranging from -55°C to 175°C, making it suitable for demanding environments. Packaged in a space-efficient TO-263 format, this device is ideal for surface mount applications in various industrial and automotive sectors.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

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