G3R60MT07K
- Description
- Silicon Carbide MOSFET N-Channel Enhancement Mode
Quantity
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- High Efficiency and Low On-Resistance
- Superior Thermal Performance for Enhanced Reliability
- High Breakdown Voltage Suitable for Harsh Environments
- Ideal for Power Management in Electric Vehicles and Renewable Energy
The GeneSIC Semiconductor Silicon Carbide MOSFET N-Channel Enhancement Mode is a cutting-edge power transistor designed for high-efficiency applications in demanding environments. With its superior thermal performance and high breakdown voltage, this MOSFET is ideal for power management in electric vehicles, renewable energy systems, and industrial automation. Its robust construction ensures reliability and longevity, making it a preferred choice for engineers seeking to optimize performance while minimizing energy loss.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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