MMBT3906-TP

Description
Transistor, Bipolar, Si, PNP, Amplifier, Small Signal, VCEO -40VDC, IC 0.2A, PD 0.3W
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
40V
Transition Frequency
250MHz
hFE Min
60
Datasheet
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  • Maximum Transition Frequency: 250 MHz
  • Compact SOT-23 Package
  • Wide Operating Temperature Range: -55°C to 150°C
  • Power Dissipation: 300 mW
  • Collector Emitter Voltage (VCEO): 40 V

The MCC PNP Small Signal Bipolar Transistor is designed for high-frequency amplification in various electronic applications. With a maximum transition frequency of 250 MHz, this transistor ensures efficient signal processing and reliable performance. Housed in a compact SOT-23 package, it is suitable for surface mount technology, making it an ideal choice for space-constrained designs. This component operates effectively within a wide temperature range, ensuring versatility in diverse environments.

This Small Signal Bipolar Transistor is commonly used in low-power amplification and switching applications. It is ideal for consumer electronics, communication devices, and signal processing circuits due to its high gain and frequency capabilities. Engineers and designers favor it for its compact size and efficient power dissipation in surface mount applications.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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