MT40A512M16TB-062E

Description
DRAM Chip DDR4 SDRAM 8Gb 512M X 16 1.2V 98-Pin FBGA
Memory Technology
DDR4
Memory Type
SDRAM
Access Time
160ps
Micron MT40A512M16TB-062E product image

Quantity

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  • Synchronous Memory Technology
  • High Density: 8Gb
  • Operating Voltage Range: 1.14V to 1.26V
  • Access Time: 160ps
  • Temperature Range: 0°C to 95°C
  • Lead Free and RoHS Compliant

The Micron DRAM Chip DDR4 SDRAM 8Gb 512M X 16 1.2V 98-Pin FBGA is a high-performance memory solution designed for modern computing applications. With a density of 8Gb and a frequency of 3200M Hz, this synchronous DRAM chip delivers exceptional speed and efficiency. Its compact TFBGA package ensures easy integration into various devices, making it an ideal choice for both consumer and industrial electronics.

The Micron DRAM Chip DDR4 SDRAM is used primarily in high-performance computing applications, including servers, workstations, and gaming systems. It provides increased speed and efficiency due to its 3200M Hz frequency and low voltage operation. This memory chip is suitable for users looking to enhance system performance and responsiveness.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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