2N3584
Description
Transistor GP BJT NPN 250V 2A 2-Pin TO-66 Bag
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
750mV
hFE Min
40
Transition Frequency
10MHz
Quantity
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- High Collector Base Voltage: 375V
- Maximum Operating Temperature: 150°C
- Gain Bandwidth Product: 10MHz
- Lead-Free & RoHS Compliant
The Central Semiconductor GP BJT NPN Transistor is a robust electronic component designed for high-performance applications requiring reliable switching and amplification. With a maximum collector current of 2A and a collector-emitter breakdown voltage of 250V, this transistor is ideal for various electronic circuits. Housed in a compact TO-66 package, it ensures efficient thermal management and is suitable for through-hole mounting. This transistor operates effectively in a wide temperature range, making it a versatile choice for both commercial and industrial applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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