PMCM6501UPEZ
- Description
- 20 V, P-channel Trench MOSFET
- Drain to Source Resistance
- 22mΩ
- Datasheet
Quantity
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- Low Drain to Source Resistance: 22mO
- High Efficiency for Power Management Applications
- Compact Design for Space-Constrained Applications
- Lead-Free & RoHS Compliant
The Nexperia 20 V P-channel Trench MOSFET is designed for high-efficiency switching applications, providing exceptional performance in a compact package. With a low drain to source resistance, this MOSFET ensures minimal power loss and improved thermal management. Its robust design makes it suitable for a variety of applications, including power management and signal switching in consumer electronics and industrial systems.
The 20 V, P-channel Trench MOSFET is commonly used in power management applications, including switching power supplies and DC-DC converters. Its low drain-to-source resistance of 22mΩ makes it ideal for efficient power control and energy conservation. This component is utilized by electrical engineers and designers in the creation of various consumer electronics and industrial systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.