LSI1012XT1G
Description
N-channel 1.8-V (g-s) Mosfet
Gate to Source Voltage (Vgs)
6V
Continuous Drain Current (ID)
500mA
Quantity
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Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
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- Continuous Drain Current: 500mA
- Gate to Source Voltage: 6V
- Max Operating Temperature: 150°C
- Min Operating Temperature: -55°C
- Fast Rise Time: 5ns
- Lead-Free & RoHS Compliant
The Leshan Radio Co N-channel 1.8-V (g-s) Mosfet is designed for high-efficiency switching applications, providing reliable performance in compact electronic circuits. With its surface mount design, this Mosfet is ideal for space-constrained environments while delivering robust electrical characteristics. It operates effectively across a wide temperature range, making it suitable for various industrial and consumer applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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