IGB50N60TATMA1

Description
Trans IGBT Chip N-CH 600V 90A 333000mW 3-Pin(2+Tab) D2PAK T/R
Collector Emitter Voltage (VCEO)
600V
Datasheet
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  • High Voltage Rating: 600V
  • Max Collector Current: 100A
  • Power Dissipation: 333W
  • Surface Mount TO-263 Package
  • Temperature Range: -40°C to 175°C
  • Lead-Free & RoHS Compliant

The Infineon Trans IGBT Chip N-CH is a powerful and efficient electronic component designed for high-performance applications requiring robust switching capabilities. With a collector emitter voltage rating of 600V and a maximum collector current of 100A, this IGBT chip is ideal for demanding power electronics applications. Its surface mount design in a TO-263 package ensures easy integration into various systems while maintaining high thermal performance with a maximum operating temperature of 175°C.

The Trans IGBT Chip is commonly used in high-power applications such as industrial drives, power converters, and motor control. With a collector-emitter voltage of 600V and a maximum collector current of 100A, it is ideal for demanding environments that require robust performance. Engineers and designers in the power electronics sector typically utilize this component to enhance efficiency and reliability in their systems.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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