UGF8J
Description
Ultra Fast Recovery Rectifier Diode (trr 25ns), 30uA, 600V
Forward Voltage
2.9V
Reverse Recovery Time
25ns
Max Junction Temperature (Tj)
150°C
Max Repetitive Reverse Voltage (Vrrm)
600V
Datasheet
Quantity
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- Fast Reverse Recovery Time of 25ns
- Max Repetitive Reverse Voltage of 600V
- Max Forward Surge Current of 65A
- Low Reverse Leakage Current of 30µA
- Power Dissipation of 400mW
- Max Junction Temperature of 150°C
The Taiwan Semiconductor Ultra Fast Recovery Rectifier Diode is designed for high-efficiency applications requiring rapid switching and minimal reverse recovery time. With a reverse recovery time of just 25ns, this diode is ideal for power supply circuits and other electronic applications where performance and reliability are paramount. It operates effectively at a maximum repetitive reverse voltage of 600V and is capable of handling high surge currents, making it a versatile choice for various electronic designs.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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