HGTP5N120BND
- Description
- Trans IGBT Chip N-CH 1200V 21A 167000mW 3-Pin(3+Tab) TO-220AB Rail
- Max Power Dissipation
- 167W
- Collector Emitter Saturation Voltage
- 2.45V
- Collector Emitter Voltage (VCEO)
- 1.2kV
- Continuous Collector Current
- 21A
- Datasheet
Quantity
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- High Voltage Rating: 1.2kV
- Continuous Collector Current: 21A
- Max Power Dissipation: 167W
- Compact TO-220AB Package
- Wide Operating Temperature Range: -55°C to 150°C
The onsemi Trans IGBT Chip N-CH 1200V 21A is a powerful electronic component designed for high-efficiency applications. This chip is housed in a robust TO-220AB package, making it suitable for various industrial and commercial uses. With a collector emitter breakdown voltage of 1.2kV and a continuous collector current rating of 21A, it ensures reliable performance under demanding conditions. Its compact design and high power dissipation capability make it an ideal choice for power electronics and motor control applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
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