PT15-21B/TR8

Description
940 nm 30 Vce 20 mA Black Flat Top View Lens Phototransistor
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
5V
Dark Current
100nA
Max Collector Current
20mA
Peak Wavelength
940nm
Datasheet
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  • Peak Wavelength: 940 nm
  • Collector Emitter Breakdown Voltage: 30 V
  • Max Collector Current: 20 mA
  • Fast Response Times: Rise and Fall Time of 15 µs
  • Operating Temperature Range: -25°C to 85°C
  • Lead-Free & RoHS Compliant

The Everlight 940 nm phototransistor is designed for high-performance applications requiring reliable light detection and conversion. With a peak wavelength of 940 nm, this NPN phototransistor features a flat black lens that enhances its sensitivity and efficiency. It is suitable for surface mount applications and operates effectively within a wide temperature range, making it an ideal choice for various electronic devices.

The 940 nm phototransistor is commonly used in various optical applications, including proximity sensors, infrared communication, and light detection systems. Its sensitive NPN configuration enables efficient light sensing, making it ideal for automation and control systems. Engineers and designers in electronics often utilize this phototransistor for its reliable performance and compact surface-mount design.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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