XP161A1355PR

Description
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Gate to Source Voltage (Vgs)
8V
Drain to Source Voltage (Vdss)
20V
Continuous Drain Current (ID)
4A
Input Capacitance
390pF
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  • Continuous Drain Current ID: 4A
  • Drain to Source Voltage Vdss: 20V
  • Fast Switching Times with Rise Time: 15ns and Fall Time: 45ns
  • Low On-Resistance Rds On Max: 50mΩ
  • Wide Operating Temperature Range: -55°C to 150°C
  • Lead-Free & RoHS Compliant

The Torex Power Field-Effect Transistor is a high-performance N-Channel MOSFET designed for efficient power management in various electronic applications. With a continuous drain current rating of 4A and a maximum drain to source voltage of 20V, this transistor ensures reliable operation in demanding environments. Its compact surface mount design and robust specifications make it an ideal choice for modern electronic circuits.

This MOSFET is commonly used in power management applications, including switching and amplification in various electronic devices. It features a maximum continuous drain current of 4A and is suitable for use in compact surface-mount designs. Engineers in industries such as consumer electronics and automotive utilize this component to optimize performance and efficiency in their circuits.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
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