IXBH32N300
- Description
- Igbt 3000V 80A 400W TO247
- Max Power Dissipation
- 400W
- Collector Emitter Voltage (VCEO)
- 3.2V
- Datasheet
Quantity
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- Collector Emitter Breakdown Voltage: 3kV
- Max Collector Current: 80A
- Max Power Dissipation: 400W
- Reverse Recovery Time: 1.5µs
- Lead-Free & RoHS Compliant
The IXYS IGBT 3000V 80A 400W TO247 is a powerful insulated gate bipolar transistor designed for high voltage applications. With a robust collector emitter breakdown voltage of 3kV, this component is ideal for demanding power electronics tasks. Its efficient design allows for a maximum collector current of 80A and a power dissipation capability of 400W, making it suitable for various industrial applications. The TO-247 package ensures easy mounting and reliable performance in through-hole configurations.
The IGBT 3000V 80A 400W TO247 is primarily used in high power switching applications, such as inverters, motor drives, and power supplies. It is particularly suitable for industries requiring efficient energy management and reliable performance under high voltage conditions. Electrical engineers and manufacturers utilize this component for its excellent breakdown voltage and current handling capabilities.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.