Description
Mosfet Transistor, N Channel, 200 Ma, 60 V, 2.7 Ohm, 10 V, 1.2 V
Drain to Source Voltage (Vdss)
60V
Continuous Drain Current (ID)
200mA
Datasheet
Product Image
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
  • Continuous Drain Current: 200 mA
  • Drain to Source Voltage: 60 V
  • Low On-Resistance: 2.7 Ω
  • Max Operating Temperature: 150°C
  • Compact SOT-23 Package with 3 Pins

The NXP Semiconductors N Channel Mosfet Transistor is designed for efficient switching applications, offering reliable performance in a compact SOT-23 package. With a continuous drain current of 200 mA and a drain to source voltage of 60 V, this transistor is ideal for various electronic circuits requiring robust power management. Its low threshold voltage of 1.2 V ensures optimal operation in low-voltage applications, making it a versatile choice for engineers and designers.

The Mosfet Transistor is commonly used in various electronic applications for switching and amplifying signals. With a continuous drain current of 200mA and a drain-to-source voltage of 60V, it is ideal for low-power devices. Engineers and designers in the electronics industry utilize this component in circuits requiring efficient control of power and signal processing.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090
Quantity
Need this part?
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
Fusion-Tested. Quality Guaranteed.
See something worth saving? Create an account to track this part and get alerts on price and availability updates.
The Latest Insights
The Latest Insights