PDTC114ET-Q
- Description
- Trans Digital BJT NPN 50V 100mA 250mW Automotive AEC-Q101 3-Pin SOT-23 T/R
- Collector Emitter Saturation Voltage
- 100mV
- Collector Emitter Voltage (VCEO)
- 50V
- hFE Min
- 30
- Max Junction Temperature (Tj)
- 150°C
Quantity
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- High Collector Base Voltage: 50V
- Low Collector Emitter Saturation Voltage: 100mV
- Maximum Operating Temperature: 150°C
- Compact 3-Pin SOT-23 Package
- Lead-Free & RoHS Compliant
The Nexperia Trans Digital BJT NPN is a robust electronic component designed for automotive applications, meeting AEC-Q101 standards. This transistor features a compact SOT-23 package, making it ideal for space-constrained designs. With a maximum collector current of 100mA and a power dissipation of 250mW, it ensures reliable performance in demanding environments. The device operates efficiently at high temperatures, with a maximum operating temperature of 150°C, making it suitable for various automotive applications.
This NPN bipolar junction transistor (BJT) is commonly used in automotive applications due to its ability to operate at high temperatures and voltages, specifically designed for reliability in demanding environments. It is ideal for switching and amplification tasks and is particularly suited for circuits requiring compact components, such as in space-constrained electronic devices. Engineers and manufacturers in the automotive sector utilize this component to ensure compliance with AEC-Q101 standards.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.