LBC856BLT1G
- Description
- Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
- Collector Emitter Voltage (VCEO)
- 65V
Quantity
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- Collector Base Voltage: 80V
- Max Operating Temperature: 150°C
- Min Operating Temperature: -55°C
- Max Power Dissipation: 225mW
- Lead-Free & RoHS Compliant
The Leshan Radio Co. Small Signal Bipolar Transistor is a high-performance PNP silicon transistor designed for efficient signal amplification in various electronic applications. With a maximum collector current of 100mA and a collector emitter voltage of 65V, this transistor is ideal for low-power circuits requiring reliable performance. Its surface mount design allows for easy integration into compact layouts, making it suitable for modern electronic devices.
This small signal bipolar transistor is commonly used in amplification and switching applications within electronic circuits. It is suitable for use in various devices, particularly in consumer electronics and industrial systems, due to its compact surface mount design. Engineers and designers leverage its robust specifications, including a maximum collector current of 100mA and high voltage ratings, to ensure reliable performance in diverse environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.