LMBT3904LT1G
- Description
- 40V 225mW 200mA 100@10mA1V 300MHz 300mV@50mA5mA NPN -55°+150°(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
- Collector Emitter Voltage (VCEO)
- 40V
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Collector Base Voltage: 60V
- Collector Emitter Voltage: 40V
- Max Collector Current: 200mA
- Max Power Dissipation: 1W
- Temperature Range: -55°C to 150°C
- Lead-Free & RoHS Compliant
The Leshan Radio Co. 40V NPN Bipolar Transistor is designed for high-performance applications requiring reliable switching and amplification. With a maximum collector current of 200mA and a power dissipation of 1W, this transistor operates efficiently across a wide temperature range from -55°C to 150°C. Packaged in a compact SOT-23 form factor, it is ideal for space-constrained designs while ensuring compliance with RoHS standards for environmental safety.
The 40V 225mW NPN bipolar transistor is commonly used in various electronic applications, including switching and amplification in low to moderate power circuits. Its wide temperature range from -55°C to 150°C makes it suitable for harsh environments. This transistor is ideal for engineers and designers in the fields of telecommunications and industrial electronics.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.