IRF620
- Description
- Trans MOSFET N-CH 200V 5.2A 3-Pin(3+Tab) TO-220AB
- Drain to Source Voltage (Vdss)
- 200V
- Continuous Drain Current (ID)
- 5.2A
- Drain to Source Resistance
- 800mΩ
- Datasheet
Quantity
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- Continuous Drain Current ID: 5.2A
- Drain to Source Breakdown Voltage: 200V
- Drain to Source Resistance: 800mΩ
- Power Dissipation: 50W
- Rise Time: 22ns
The International Rectifier Trans MOSFET N-CH 200V 5.2A is a robust electronic component designed for high-efficiency power management applications. With a maximum continuous drain current of 5.2A and a breakdown voltage of 200V, this MOSFET is ideal for various switching applications. Its TO-220AB package ensures easy mounting and effective heat dissipation, making it suitable for demanding environments. This component is a reliable choice for engineers looking to enhance performance in their electronic designs.
The Trans MOSFET N-CH is commonly used in power management applications for switching and amplifying signals. With its high voltage and current ratings, it is ideal for use in power supplies, motor control, and automotive electronics. Engineers and designers in the electronics industry utilize this component for efficient circuit design.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.