IRF640
- Description
- Power MOSFET Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide...
- Gate to Source Voltage (Vgs)
- 20V
- Drain to Source Voltage (Vdss)
- 200V
- Continuous Drain Current (ID)
- 18A
- Drain to Source Resistance
- 180mΩ
Quantity
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- Continuous Drain Current of 18A
- Drain to Source Breakdown Voltage of 200V
- Low Drain to Source Resistance of 180mΩ
- Fast Switching Times with Rise Time of 51ns and Fall Time of 36ns
- Max Power Dissipation of 125W
The International Rectifier Power MOSFET is a high-performance N-Channel power field-effect transistor designed for efficient switching applications. With a continuous drain current rating of 18A and a breakdown voltage of 200V, this MOSFET is ideal for various power management tasks. Its low drain to source resistance of 0.18Ω ensures minimal power loss, making it suitable for high-efficiency designs. Packaged in a TO-220 case, it offers robust thermal performance and is perfect for demanding environments.
The Power MOSFET is commonly used in power management applications such as motor control, power supplies, and switching regulators. Its key capabilities include high-speed switching and low on-resistance, making it suitable for efficient power conversion. Engineers and designers in electronics utilize this component to enhance performance and reduce energy losses in their circuits.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.