SS8050-G
- Description
- Trans GP BJT NPN 25V 1.5A 300MW 3-PIN SOT-23 T/R
- Collector Emitter Saturation Voltage
- 500mV
- Collector Emitter Voltage (VCEO)
- 25V
- Transition Frequency
- 100MHz
- hFE Min
- 200
- Max Junction Temperature (Tj)
- 150°C
- Datasheet
Quantity
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- Maximum Collector Current: 1.5A
- Collector Emitter Breakdown Voltage: 25V
- Transition Frequency: 100MHz
- Power Dissipation: 300mW
- Compact SOT-23 Package
- Lead-Free & RoHS Compliant
The Comchip Trans GP BJT NPN is a versatile and efficient transistor designed for a variety of electronic applications. With a maximum collector current of 1.5A and a collector emitter breakdown voltage of 25V, this component is ideal for switching and amplification tasks. Its compact SOT-23 package ensures easy integration into space-constrained designs while maintaining high performance. This transistor is RoHS compliant, making it suitable for environmentally conscious projects.
The Trans GP BJT NPN is commonly used in electronic circuits for amplification and switching applications. It is ideal for low-voltage designs due to its high current gain and relatively low saturation voltage. Engineers and hobbyists use this component in various projects, from small signal amplification to driver circuits for larger loads.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.