BC857C-TP

Description
Trans GP BJT PNP 45V 0.1A 310MW 3-PIN SOT-23 T/R
Collector Emitter Voltage (VCEO)
650mV
Transition Frequency
200MHz
Datasheet
Product Image

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  • Collector Emitter Breakdown Voltage: 45V
  • Max Collector Current: 100mA
  • Gain Bandwidth Product: 100MHz
  • Max Power Dissipation: 310mW
  • Lead-Free & RoHS Compliant

The MCC Trans GP BJT PNP is a versatile and efficient transistor designed for a variety of electronic applications. With a maximum collector current of 100mA and a collector emitter breakdown voltage of 45V, this component is ideal for switching and amplification tasks. Its compact SOT-23 package allows for easy surface mounting, making it suitable for space-constrained designs. This PNP transistor operates effectively at a maximum temperature of 150°C, ensuring reliability in demanding environments.

The Trans GP BJT PNP is commonly used in signal amplification and switching applications within electronic circuits. It is suitable for low-power applications where high-frequency performance is required, making it ideal for consumer electronics and telecommunications. Engineers and designers in the electronics industry utilize this component for its compact size and efficient operation under various conditions.

Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.

AS6081
AS9120B
ISO 9001
QMS STD 9090

Quantity

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