BCX52-16
- Description
- Bipolar (BJT) Single Transistor, Pnp, 60 V, 145 Mhz, 500 Mw, 1 A, 100
- Collector Emitter Voltage (VCEO)
- 60V
- Transition Frequency
- 145MHz
- Datasheet
Quantity
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- High Collector Emitter Breakdown Voltage 60 V
- Transition Frequency of 145 MHz
- Max Power Dissipation of 500 mW
- Compact SOT-89 Package
- Three Pin Configuration
The NXP Semiconductors PNP Bipolar Single Transistor is designed for high-frequency applications requiring reliable performance and efficiency. With a maximum collector emitter breakdown voltage of 60 V and a transition frequency of 145 MHz, this transistor is ideal for various electronic circuits. Packaged in a compact SOT-89 case, it ensures easy integration into your designs while maintaining high power dissipation capabilities of up to 500 mW. This component is perfect for engineers looking for a robust solution in their electronic projects.
The Bipolar (BJT) Single Transistor is commonly used for amplification and switching applications in electronic circuits. With a maximum collector emitter breakdown voltage of 60V and a transition frequency of 145MHz, it is ideal for high-frequency operations. This component is widely utilized by electronics engineers and hobbyists in various devices, from audio equipment to communication systems.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.