M323R4GA3EB0-CWMOD

• 32GB DDR5 UDIMM, 5600MT/S Data Rate
• Dual-Rank x8 (2R X 8) Organization
• 288-Pin Unbuffered DIMM Form Factor
• Component Composition: 16 Placements of 2G X 8 Devices
• 2800M Hz Base clock, 5600M Hz Effective Clock Speed
• 1.1V Operating Voltage
• Samsung E-Die Revision

The Samsung M323R4GA3EB0-CWMOD is a 32GB DDR5 unbuffered DIMM rated at 5600MT/s, organized as dual-rank x8 on a 288-pin module operating at 1.1V. It is built from sixteen 16Gb x8 E-die components, which is what yields 32GB across two ranks. A UDIMM has no register between the memory controller and the DRAM devices, so it offers slightly lower latency than a registered module at the cost of supporting fewer modules per channel. Base clock is 2800M Hz, giving the 5600MT/s effective data rate.

The M323R4GA3EB0-CWMOD is used as main memory in desktops, workstations, all-in-one systems and small-form-factor PCs built on DDR5 platforms, and in entry servers and industrial computers that use unbuffered rather than registered memory. DDR5-5600 is the native speed grade for later 12th to 14th Generation Intel Core platforms and AMD Ryzen 7000 and 8000 series systems, so a 32GB dual-rank module of this specification is the typical fit for a two-slot 64GB or four-slot 128GB build. Buyers include PC OEMs and system integrators, corporate IT teams standardising desktop fleets, and workstation users adding capacity for CAD, video editing and local AI workloads. Samsung E-die at this capacity is a frequently requested part on the open market.