2SCR554P5T100
- Description
- Small Signal Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
- Collector Emitter Voltage (VCEO)
- 300mV
- Transition Frequency
- 300MHz
- Datasheet
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.
- Max Collector Current: 1.5A
- Collector Emitter Breakdown Voltage: 80V
- Max Power Dissipation: 500mW
- Transition Frequency: 300MHz
- Lead-Free & RoHS Compliant
The ROHM Small Signal Bipolar Transistor is designed for high-efficiency applications requiring reliable performance and compact size. With a maximum collector current of 1.5A and a collector emitter breakdown voltage of 80V, this NPN silicon transistor is ideal for various electronic circuits. Its surface mount design allows for easy integration into modern PCB layouts, making it a versatile choice for engineers and designers.
This Small Signal Bipolar Transistor is commonly used in low-power amplification and switching applications. With a maximum collector current of 1.5A and a breakdown voltage of 80V, it is suitable for various electronic circuits where NPN configuration is required. It is widely utilized by engineers and hobbyists in designing compact, efficient circuitry in consumer electronics and communications devices.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.