YQ5LAM10CTFTR
- Description
- Trench MOS Structure, 100V, 5A, PMDTM, Highly Efficient SBD for Automotive
- Forward Voltage
- 720mV
- Average Rectified Current
- 5A
Quantity
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- High Voltage Rating 100V
- Average Rectified Current 5A
- Low Forward Voltage 720mV
- Capacitance 95pF
- Surface Mount SOD-128 Package
The ROHM Trench MOS Structure is a highly efficient Schottky Barrier Diode (SBD) designed specifically for automotive applications. With a voltage rating of 100V and a current capacity of 5A, this surface mount component ensures reliable performance in demanding environments. Packaged in a compact SOD-128 case, it offers excellent thermal management and space-saving benefits, making it an ideal choice for modern automotive designs.
The Trench MOS Structure diode is designed for automotive applications where high efficiency and reliability are critical. It provides a low forward voltage drop of 720mV and supports an average rectified current of 5A, making it suitable for power management and rectification in vehicle electronics. Engineers and manufacturers in the automotive sector commonly use this rectifier diode for its exceptional performance in harsh environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.