TIM7785-60SL
- Description
- RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
- Continuous Drain Current (ID)
- 20A
- Gate to Source Voltage (Vgs)
- -5V
- Datasheet
Quantity
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- Continuous Drain Current: 20A
- Gate to Source Voltage: -5V
- Max Operating Temperature: 175°C
- Min Operating Temperature: -65°C
- 3-Pin Configuration for Easy Integration
- RoHS Compliant for Environmental Safety
The Toshiba RF Power Field-Effect Transistor is a high-performance N-Channel Junction FET designed for X Band applications. This component is ideal for RF amplification in various electronic systems, providing reliable performance in demanding environments. With its robust construction and advanced materials, this transistor ensures efficient operation and high power handling capabilities, making it suitable for a range of RF applications.
The RF Power Field-Effect Transistor is commonly used in high-frequency applications like radar and communication systems, particularly within the X Band frequency range. It provides efficient amplification of RF signals, making it suitable for applications that require reliable performance under extreme temperatures. This component is typically used by engineers and manufacturers in the aerospace and telecommunications industries.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.