IRFR220N
- Description
- MOSFET, Power; N-Channel; 600 Milliohms (Max.) @ 10 V, 2.9 A; 200 V (Min.)
- Gate to Source Voltage (Vgs)
- 20V
- Continuous Drain Current (ID)
- 5A
- Drain to Source Resistance
- 600mΩ
- Datasheet
Quantity
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- Surface Mount DPAK Package
- Continuous Drain Current Rating of 5A
- Drain to Source Breakdown Voltage of 200V
- Max Operating Temperature of 175°C
- Gate to Source Voltage of 20V
The International Rectifier N-Channel Power MOSFET is designed for high-efficiency switching applications, offering exceptional performance with a maximum drain to source resistance of 600 mΩ at 10 V. This robust component is ideal for power management solutions, providing reliable operation in demanding environments. With a continuous drain current rating of 5 A and a breakdown voltage of 200 V, this MOSFET ensures optimal performance in various electronic circuits.
This MOSFET is commonly used in power management applications, including switching power supplies and motor control circuits. It offers low on-resistance and high current handling capabilities, making it ideal for efficient power conversion. Engineers and designers in electronic manufacturing often choose this component for its reliability in high-temperature environments and surface mount applications.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.