2SA1725
- Description
- Power Bipolar Transistor, 6A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
- Collector Emitter Voltage (VCEO)
- 80V
- Transition Frequency
- 20MHz
- hFE Min
- 50
- Datasheet
Quantity
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- Max Collector Current: 6A
- Collector Emitter Voltage VCEO: 80V
- Transition Frequency: 20MHz
- Max Operating Temperature: 150°C
- Max Power Dissipation: 30W
- RoHS Compliant
The Sanken Power Bipolar Transistor is a robust and efficient PNP silicon transistor designed for high-performance applications. With a maximum collector current of 6A and a collector emitter voltage rating of 80V, this transistor is ideal for power amplification and switching applications. Housed in a TO-220AB package, it ensures reliable thermal performance and ease of integration into various electronic circuits.
The Power Bipolar Transistor is commonly used in power amplification and switching applications, making it suitable for various electronic devices. With a maximum collector current of 6A and a collector-emitter voltage of 80V, it is ideal for high-performance circuits in consumer electronics, industrial equipment, and automotive applications. Engineers, designers, and manufacturers utilize this component for its reliability and efficiency in managing higher power loads.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.