KHBBC4B03C-MC1K
- Description
- DRAM Chip HBM3E 36GB 9.2Gbps 32ms
- Memory Technology
- HBM3E
- Access Time
- 32ms
Quantity
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- High Bandwidth Memory Technology HBM3E
- Data Transfer Rate of 9.2Gbps
- Access Time of 32ms
- Compact MPGA Package for Space Efficiency
- Surface Mount Design for Easy Integration
The Samsung DRAM Chip HBM3E 36GB is a cutting-edge memory solution designed for high-performance computing applications. With a remarkable frequency of 9.2Gbps and an access time of 32ms, this chip delivers exceptional speed and efficiency. Its advanced HBM3E technology ensures optimal data transfer rates, making it ideal for demanding tasks in data centers and high-end computing environments. Packaged in a compact MPGA format, this surface mount chip is engineered to operate reliably within a temperature range of 0°C to 70°C.
The DRAM Chip HBM3E is primarily used in high-performance computing applications, such as data centers, artificial intelligence, and advanced graphics processing. With a fast frequency of 9.2Gbps and low access time of 32ms, it provides efficient data transfer and processing capabilities for demanding workloads. This chip is commonly utilized by technology manufacturers and system integrators looking to enhance performance in specialized computing environments.
Fusion’s in-house quality hubs and Prosemi testing facility are fully certified to meet critical industry standards for electronic component inspection and testing.
Quantity
Let us do the sourcing. Even if it's not available now, our team can track it down and tailor a solution just for you.